Method of controlling critical dimension microloading of photoresist trimming process by selective sidewall polymer deposition
US6911399B2 · kind B2 · utility
20Cited by
40References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 19, 2003 |
| Grant date | Jun 28, 2005 |
| Priority date | — |
| Expiry date | Sep 19, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for trimming photoresist features on a semiconductor substrate in a processing system. The method utilizes a process gas mixture comprising a hydrocarbon gas, an oxygen gas and an inert gas. The critical dimension (CD) microloading of the dense and the isolated regions can be eliminated and the photoresist trimming rate can also be reduced to enable better critical dimension (CD) control.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.