Methods of reducing plasma-induced damage for advanced plasma CVD dielectrics
US6911403B2 · kind B2 · utility
3Cited by
5References
31Claims
0Family size
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Key dates
| Filing date | Aug 20, 2003 |
| Grant date | Jun 28, 2005 |
| Priority date | — |
| Expiry date | Sep 10, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76801
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for depositing an organosilicate layer on a substrate includes varying one or more processing conditions during a process sequence for depositing an organosilicate layer from a gas mixture comprising an organosilicon compound in the presence of RF power in a processing chamber. In one aspect, the distance between the substrate and a gas distribution manifold in the processing chamber is varied during processing. Preferably, the method of depositing an organosilicate layer minimizes plasma-induced damage to the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.