Memory device having high work function gate and method of erasing same

US6912163B2 · kind B2 · utility

Assignee

• FASL LLC · US

Inventors

• Wei Zheng · Beijing, CN
• Yun Wu · Sunnyvale, US
• Hidehiko Shiraiwa · San Jose, US
• Mark T. Ramsbey · Sunnyvale, US
• Tazrien Kamal · Atlanta, US

Key dates

• Filing date: Sep 9, 2003
• Grant date: Jun 28, 2005
• Expiry date: Oct 1, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/687

Abstract

A charge trapping dielectric memory device. The memory device includes a gate electrode disposed over a dielectric stack that includes a dielectric charge trapping layer. The gate electrode has a work function of about 4.6 eV to about 5.2 eV.