Layer transfer methods

US6913971B2 · kind B2 · utility

Assignees

• S.O.I. TEC SILICON ON INSULATOR TECHNOLOGIES · FR
• COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES · FR

Inventors

• Bernard Aspar · Voiron, FR
• Severine Bressot · La Rivière, FR
• Olivier Rayssac · Grenoble, FR

Key dates

• Filing date: Jul 9, 2003
• Grant date: Jul 5, 2005
• Expiry date: Oct 13, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/76254
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods for transferring a layer of material from a source substrate having a zone of weakness onto a support substrate to fabricate a composite substrate are described. An implementation includes forming at least one recess in at least one of the source and support substrates, depositing material onto at least one of a front face of the source substrate and a front face of the support substrate, pressing the front faces of the source and support substrates together to bond the substrates, and detaching a transfer layer from the source substrate along the zone of weakness. When the front faces are pressed together, any excess material is received by the recess. The recess may advantageously include an opening in the front face of at least one of the source substrate and the support substrate.