Bilayer HDP CVD/PE CVD cap in advanced BEOL interconnect structures and method thereof
US6914320B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 23, 2004 |
| Grant date | Jul 5, 2005 |
| Priority date | — |
| Expiry date | Mar 23, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An advanced back-end-of-line (BEOL) metallization structure is disclosed. The structure includes a bilayer diffusion barrier or cap, where the first cap layer is formed of a dielectric material preferably deposited by a high density plasma chemical vapor deposition (HDP CVD) process, and the second cap layer is formed of a dielectric material preferably deposited by a plasma-enhanced chemical vapor deposition (PE CVD) process. A method for forming the BEOL metallization structure is also disclosed. The invention is particularly useful in interconnect structure comprising low-k dielectric material for the inter-layer dielectric (ILD) and copper for the conductors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.