Semiconductor device having a low-K dielectric layer
US6914335B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 2, 2002 |
| Grant date | Jul 5, 2005 |
| Priority date | — |
| Expiry date | Aug 24, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved semiconductor device is described. That semiconductor device includes a first insulating layer, having a low-k dielectric constant that preferably comprises a carbon doped oxide, that is formed on a substrate. The device further includes a second layer, which is formed on the first layer, that has a relatively high dielectric constant and superior mechanical strength. The second layer is preferably under compressive stress. A third layer may be formed on the second layer, which has a relatively low dielectric constant and relatively poor mechanical strength, and a fourth layer may be formed on the third layer, which has a relatively high dielectric constant and superior mechanical strength.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.