Self-aligned magnetic clad write line and its method of formation

US6916669B2 · kind B2 · utility

Assignee

• Freeescale Semiconductor, Inc. · US

Inventors

• Robert E. Jones · Austin, US
• Carole C. Barron · Austin, US
• Eric D. Luckowski · Round Rock, US
• Bradley M. Melnick · Austin, US

Key dates

• Filing date: Mar 3, 2003
• Grant date: Jul 12, 2005
• Expiry date: Mar 3, 2023

Classification

• Technology area (CPC B): Performing Operations; Transporting
• CPC primary: B82Y10/00
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A self-aligned magnetic clad bit line structure (274) for a magnetic memory element (240a) and its method of formation are disclosed, wherein the self-aligned magnetic clad bit line structure (274) extends within a trench (258) and includes a conductive material (264), magnetic cladding sidewalls (262) and a magnetic cladding cap (252). The magnetic cladding sidewalls (262) at least partially surround the conductive material (264) and the magnetic cladding cap (252) is substantially recessed within the trench with respect to the top of the trench.