Electron beam exposure apparatus, electron beam exposure apparatus calibration method, and semiconductor element manufacturing method
US6917045B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 26, 2003 |
| Grant date | Jul 12, 2005 |
| Priority date | — |
| Expiry date | Dec 25, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/30433
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An electron beam exposure apparatus for controlling deflection timing of an electron beam with high precision, including: a blanking-electrode array having a deflecting electrode for deflecting an electron beam; a deflection timing control section for outputting the control signal for controlling the blanking-electrode array; a load circuit, of which the impedance is the same as that of the blanking-electrode array, where the wire length between the deflection timing control section and the load circuit is shorter than the wire length between the deflection timing control section and the deflecting electrode of the blanking-electrode array; and a switching section, connecting with the deflection timing control section, the blanking-electrode array, and the load circuit, for switching the destination of the control signal output from the deflection timing control section between the blanking-electrode array and the load circuit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.