Group III nitride compound semiconductor device and producing method therefor
US6918961B2 · kind B2 · utility
2Cited by
7References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 24, 2003 |
| Grant date | Jul 19, 2005 |
| Priority date | — |
| Expiry date | Oct 29, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A group III nitride compound semiconductor device has a substrate and an AlN single crystal layer formed on the substrate. The AlN single crystal layer has a thickness of from 0.5 to 3 μm and has a substantially flat surface. The half-value width of an X-ray rocking curve of the AlN single crystal layer is not longer than 50 sec. In another device, a group III nitride compound semiconductor layer having a thickness of from 0.01 to 3.2 μm is grown at a temperature of from 1000 to 1180° C. on a sapphire substrate having a surface nitride layer having a thickness of not larger than 300 Å.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.