Method of forming a capacitor
US6919257B2 · kind B2 · utility
16Cited by
24References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2002 |
| Grant date | Jul 19, 2005 |
| Priority date | — |
| Expiry date | Jun 14, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method of forming a capacitor is disclosed. The method includes forming a first electrode having a non-smooth surface and selected from the group consisting of transition metals, conductive oxides, alloys thereof, and combinations thereof. The method further includes forming a second electrode, and forming a dielectric between the first and second electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.