Method of forming a transistor having multiple channels
US6921700B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 31, 2003 |
| Grant date | Jul 26, 2005 |
| Priority date | — |
| Expiry date | Oct 2, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6744
Abstract
A transistor (10) overlies a substrate (12) and has a plurality of overlying channels (72, 74, 76) that are formed in a stacked arrangement. A continuous gate (60) material surrounds each of the channels. Each of the channels is coupled to source and drain electrodes (S/D) to provide increased channel surface area in a same area that a single channel structure is conventionally implemented. A vertical channel dimension between two regions of the gate (60) are controlled by a growth process as opposed to lithographical or spacer formation techniques. The gate is adjacent all sides of the multiple overlying channels. Each channel is formed by growth from a common seed layer and the source and drain electrodes and the channels are formed of a substantially homogenous crystal lattice.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.