Atomic layer deposited nanolaminates of HfO2/ZrO2 films as gate dielectrics
US6921702B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 30, 2002 |
| Grant date | Jul 26, 2005 |
| Priority date | — |
| Expiry date | Aug 28, 2022 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/843
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A dielectric film containing HfO2/ZrO2 nanolaminates and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using SiO2. A gate dielectric is formed by atomic layer deposition of HfO2 using a HfI4 precursor followed by the formation of ZrO2 on the HfO2 layer. The HfO2 layer thickness is controlled by repeating for a number of cycles a sequence including pulsing the HfI4 precursor into a reaction chamber, pulsing a purging gas into the reaction chamber, pulsing a first oxygen containing precursor into the reaction chamber, and pulsing the purging gas until the desired thickness is formed. These gate dielectrics containing HfO2/ZrO2 nanolaminates are thermodynamically stable such that the HfO2/ZrO2 nanolaminates will have minimal reactions with a silicon substrate or other structures during processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.