Thin film forming apparatus cleaning method
US6925731B2 · kind B2 · utility
3Cited by
5References
22Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 20, 2002 |
| Grant date | Aug 9, 2005 |
| Priority date | — |
| Expiry date | Feb 20, 2022 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4405
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A cleaning process for cleaning a thermal processing apparatus includes: a heating step of heating an interior of a reaction tube at 300° C., and a cleaning step of removing deposits deposited in the thermal processing apparatus. In the cleaning step, a cleaning gas containing fluorine gas, chlorine gas and nitrogen gas is supplied into the interior of the reaction tube heated at 300° C. to remove silicon nitride so to clean an interior of the thermal processing apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.