Field-effect-controllable semiconductor component and method for fabricating the component

US6927101B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Ralf Henninger · Birkenfeld, DE
• Franz Hirler · Isen, DE
• Martin Pölzl · Ossiach, AT
• Walter Rieger · Arnoldstein, AT

Key dates

• Filing date: Mar 28, 2003
• Grant date: Aug 9, 2005
• Expiry date: Sep 13, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/62
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method for fabricating a field-effect-controllable semiconductor component includes providing a configuration having a semiconductor body with a front side, a rear side, a first terminal zone of a first conduction type, a channel zone of a second conduction type formed above the first terminal zone, and at least one control electrode adjacent the channel zone. The control electrode is insulated from the semiconductor body. A second terminal zone of the first conduction type is fabricated in the channel zone near the front side of the semiconductor body by: doping the channel zone near the front side with a first dopant concentration to fabricate a first zone of the first conduction type, and doping a section of the first zone with a second dopant concentration higher than the first dopant concentration to form a second zone of the first conduction type.