Nitrogen-free dielectric anti-reflective coating and hardmask

US6927178B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Bok Hoen Kim · San Jose, US
• Sudha Rathi · San Jose, US
• Sang-Hoon Ahn · Goyang-si, KR
• Christopher Dennis Bencher · San Jose, US
• Yuxiang Wang · Newark, US
• Hichem M'Saad · Santa Clara, US
• Mario D. Silvetti · معلمی نژاد, US
• Miguel S. Fung · Sunnyvale, US
• Keebum Jung · Gilroy, US
• Lei Zhu · Beijing, CN

Key dates

• Filing date: Dec 10, 2003
• Grant date: Aug 9, 2005
• Expiry date: Dec 11, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02274
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Methods are provided for depositing a dielectric material. The dielectric material may be used for an anti-reflective coating or as a hardmask. In one aspect, a method is provided for processing a substrate including introducing a processing gas comprising a silane-based compound and an oxygen and carbon containing compound to the processing chamber and reacting the processing gas to deposit a nitrogen-free dielectric material on the substrate. The dielectric material comprises silicon and oxygen. In another aspect, the dielectric material forms one or both layers in a dual layer anti-reflective coating.