Bipolar device having shallow junction raised extrinsic base and method for making the same

US6927476B2 · kind B2 · utility

Assignee

• Intel Business Machines Corporation · US

Inventors

• Gregory G. Freeman · Hopewell Junction, US
• Seshadri Subbanna · Brewster, US
• Basanth Jagannathan · Beacon, US
• Kathryn T. Schonenberg · Wappingers Falls, US
• Shwu-Jen Jeng · Wappingers Falls, US
• Kenneth J. Stein · Sandy Hook, US
• Jeffrey B. Johnson · Hague, US

Key dates

• Filing date: Sep 25, 2001
• Grant date: Aug 9, 2005
• Expiry date: Oct 17, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/177

Abstract

A raised extrinsic base, silicon germanium (SiGe) heterojunction bipolar transistor (HBT), and a method of making the same is disclosed herein. The heterojunction bipolar transistor includes a substrate, a silicon germanium layer formed on the substrate, a collector layer formed on the substrate, a raised extrinsic base layer formed on the silicon germanium layer, and an emitter layer formed on the silicon germanium layer. The silicon germanium layer forms a heterojunction between the emitter layer and the raised extrinsic base layer. The bipolar transistor further includes a base electrode formed on a portion of the raised extrinsic base layer, a collector electrode formed on a portion of the collector layer, and an emitter electrode formed on a portion of the emitter layer. Thus, the heterojunction bipolar transistor includes a self-aligned raised extrinsic base, a minimal junction depth, and minimal interstitial defects influencing the base width, all being formed with minimal thermal processing. The heterojunction bipolar transistor simultaneously improves three factors that affect the speed and performance of bipolar transistors: base width, base resistance, and base-collector…