Method for forming a uniform distribution of nitrogen in silicon oxynitride gate dielectric
US6930060B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2003 |
| Grant date | Aug 16, 2005 |
| Priority date | — |
| Expiry date | Jul 20, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/037
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods for preparing a silicon oxynitride layer where the silicon oxynitride layer is deposited atop a substrate and have a low concentration of nitrogen at the interface of the silicon oxynitride layer and the substrate. The silicon oxynitride layer is formed by pulsing at least one interface precursor onto a substrate, where said substrate chemisorbs a portion of said at least one interface precursor to form a monolayer of said at least one interface precursor; and pulsing a nitrogen-containing precursor onto said substrate containing said monolayer of interface precursor, where said monolayer of said at least one interface precursor chemisorbs a portion of said nitrogen-containing precursor to form a monolayer of said nitrogen-containing precursor. The interface precursor includes oxygen-containing or silicon-containing precursor gasses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.