Two-mask process for metal-insulator-metal capacitors and single mask process for thin film resistors
US6933191B2 · kind B2 · utility
3Cited by
13References
21Claims
0Family size
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Key dates
| Filing date | Sep 18, 2003 |
| Grant date | Aug 23, 2005 |
| Priority date | — |
| Expiry date | Sep 18, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
MIM capacitors and thin film resistors are fabricated with at least one less lithographic step than the prior art methods. The process step reduction is realized by using semi-transparent metallic electrodes, fabricated with a two-mask process, which provides for direct alignment, and eliminates the need for alignment trenches in an additional layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.