Method for removing conductive residue
US6933239B2 · kind B2 · utility
8Cited by
7References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2003 |
| Grant date | Aug 23, 2005 |
| Priority date | — |
| Expiry date | Sep 11, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for removing conductive residue from a layer on a semiconductor substrate by exposing the substrate to a gas comprising a fluorine containing gas and a hydrogen containing gas. In one embodiment, the gas is excited to form a plasma that removes the conductive residue during fabrication of a magneto-resistive random access memory (MRAM) device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.