Methods for forming low-k dielectric films
US6936537B2 · kind B2 · utility
5Cited by
5References
30Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 12, 2002 |
| Grant date | Aug 30, 2005 |
| Priority date | — |
| Expiry date | Oct 29, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The use of a polyhedral oligomeric silsesquioxane compound and linking agent to form an ultra low-k dielectric film on semiconductor or integrated circuit surfaces is disclosed. The reaction between the polyhedral oligomeric silsesquioxane compound and linking agent is done in a chemical vapor deposition chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.