Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices
US6936551B2 · kind B2 · utility
23Cited by
52References
36Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 1, 2003 |
| Grant date | Aug 30, 2005 |
| Priority date | — |
| Expiry date | May 1, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76807
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
One embodiment of the present invention is a method for fabricating a low-k dielectric film that includes steps of: (a) chemical vapor depositing a lower-k dielectric film; and (b) e-beam treating the lower-k dielectric film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.