Method for obtaining reversible resistance switches on a PCMO thin film when integrated with a highly crystallized seed layer
US6939724B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 13, 2003 |
| Grant date | Sep 6, 2005 |
| Priority date | — |
| Expiry date | Aug 13, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/31
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for obtaining reversible resistance switches on a PCMO thin film when integrated with a highly crystallized seed layer includes depositing, by MOCVD, a seed layer of PCMO, in highly crystalline form, thin film, having a thickness of between about 50 Å to 300 Å, depositing a second PCMO thin film layer on the seed layer, by spin coating, having a thickness of between about 500 Å to 3000 Å, to form a combined PCMO layer; increasing the resistance of the combined PCMO film in a semiconductor device by applying a negative electric pulse of between about −4V to −5V, having a pulse width of between about 75 nsec to 1 μsec; and decreasing the resistance of the combined PCMO layer in a semiconductor device by applying a positive electric pulse of between about +2.5V to +4V, having a pulse width greater than 2.0 μsec.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.