Group III nitride compound semiconductor device and method of producing the same
US6939733B2 · kind B2 · utility
11Cited by
11References
17Claims
0Family size
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Key dates
| Filing date | Dec 3, 2003 |
| Grant date | Sep 6, 2005 |
| Priority date | — |
| Expiry date | Jan 22, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/01335
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A first group III nitride compound layer, which is formed on a substrate by a method not using metal organic compounds as raw materials, is heated in an atmosphere of a mixture gas containing a hydrogen or nitrogen gas and an ammonia gas, so that the crystallinity of a second group III nitride compound semiconductor layer formed on the first group III nitride compound layer is improved. When the first group III nitride compound layer is formed on a substrate by a sputtering method, the thickness of the first group III nitride compound layer is set to be in a range of from 50 Å to 3000 Å.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.