Patent · US Expired

Preventive treatment method for a multilayer semiconductor wafer

US6939783B2 · kind B2 · utility

8Cited by
6References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 20, 2004
Grant dateSep 6, 2005
Priority date
Expiry dateFeb 20, 2024

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/76254
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A preventive treatment method for a multilayer semiconductor wafer is described. The semiconductor wafer includes a supporting substrate, at least one intermediate layer and a surface layer in which an intermediate layer has an exposed lateral edge and the wafer is to be subjected to a subsequent treatment. The method includes encapsulating the exposed lateral edge of the intermediate layer with a portion of the surface layer to prevent attack on the peripheral edge during the subsequent treatment.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.