Prevention of Ta2O5 mim cap shorting in the beol anneal cycles

US6940117B2 · kind B2 · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Douglas D. Coolbaugh · Highland, US
• Ebenezer E. Eshun · South Burlington, US
• Joseph F. Shepard, Jr. · Hopewell Junction, US
• Kenneth J. Stein · Sandy Hook, US
• Kunal Vaed · Poughkeepsie, US

Key dates

• Filing date: Apr 17, 2003
• Grant date: Sep 6, 2005
• Expiry date: Apr 18, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02263
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present invention provides a high-performance metal-insulator-metal (MIM) capacitor which contains a high-k dielectric, yet no substantial shorting of the MIM capacitor is observed. Specifically, shorting of the MIM capacitor is substantially prevented in the present invention by forming a passivation layer between the high-k dielectric layer and each of the capacitor's electrodes. The inventive MIM capacitor includes a first conductor; a first passivation layer located atop the first conductor; a high-k dielectric layer located atop the first passivation layer; a second passivation layer located atop the high k dielectric layer; and a second conductor located atop the second passivation layer.