Field-effect-controllable semiconductor component and method for producing the semiconductor component

US6940126B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Gerald Deboy · Klagenfurt, AT
• Uwe Wahl · Munich, DE
• Armin Willmeroth · Friedberg, DE

Key dates

• Filing date: Sep 4, 2003
• Grant date: Sep 6, 2005
• Expiry date: Dec 6, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/831

Abstract

A semiconductor component has at least one first terminal zone of a first conductivity type in a semiconductor body. The first terminal zone is contact-connected by a first terminal electrode. A drift zone of the first conductivity type is adjoined by a second terminal zone of the second conductivity type. A channel zone of a second conductivity type is formed between the at least one first terminal zone and the drift zone. A control electrode is insulated from the semiconductor body and adjacent to the channel zone. A first channel is formed by the channel zone in a region adjacent to the control electrode, the first channel conducts only upon application of a control voltage that is not equal to zero between the control electrode and the first terminal zone. The first terminal electrode is connected to the drift zone via at least one second channel of the first conductivity type, which already conducts in the event of a control voltage equal to zero.