Method of etching magnetic and ferroelectric materials using a pulsed bias source

US6942813B2 · kind B2 · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Chentsau Ying · Cupertino, US
• Padmapani Nallan · San Jose, US
• Ajay Kumar · Fairport, US
• Xiaoyi Chen · Mountain View, US

Key dates

• Filing date: Mar 5, 2003
• Grant date: Sep 13, 2005
• Expiry date: Oct 2, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B61/22
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A method for etching magnetic and ferroelectric materials using a pulsed substrate biasing technique (PSBT) that applies a plurality of processing cycles to the substrate, where each cycle comprises a period of plasma etching without substrate bias and a period of plasma etching with the substrate bias. In exemplary applications, the method is used for fabricating magneto-resistive random access memory (MRAM) and ferroelectric random access memory (FeRAM) devices.