Laser annealing apparatus, TFT device and annealing method of the same
US6943086B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 10, 2002 |
| Grant date | Sep 13, 2005 |
| Priority date | — |
| Expiry date | Oct 10, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/0251
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A laser beam is concentrated using an objective lens and radiated on a amorphous silicon film or polycrystalline silicon film having a grain size of one micron or less, the laser beam being processed from a continuous wave laser beam (1) to be pulsed using an EO modulator and to have arbitrary temporal energy change while pulsing ; (2) to have an arbitrary spatial energy distribution using a beam-homogenizer, filter having an arbitrary transmittance distribution, and rectangular slit; and (3) to eliminate coherency thereof using a high-speed rotating diffuser. In this manner, it is possible to realize a liquid crystal display device in which a driving circuit comprising a polycrystalline silicon film having substantially the same properties as a single crystal is incorporated in a TFT panel device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.