Semiconductor on insulator MOSFET having strained silicon channel

US6943087B1 · kind B1 · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Qi Xiang · San Jose, US
• Jung-Suk Goo · Stanford, US
• James Pan · Fishkill, US
• Ming-Ren Lin · Cupertino, US

Key dates

• Filing date: Dec 17, 2003
• Grant date: Sep 13, 2005
• Expiry date: Dec 17, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/0212

Abstract

Strained silicon is grown on a dielectric material in a trench in a silicon germanium layer at a channel region of a MOSFET after fabrication of other MOSFET elements using a removable dummy gate process to form an SOI MOSFET. The MOSFET is fabricated with the dummy gate in place, the dummy gate is removed, and a trench is formed in the channel region. Dielectric material is grown in the trench, and strained silicon is then grown from the silicon germanium trench sidewalls to form a strained silicon layer that extends across the dielectric material. The silicon germanium sidewalls impart strain to the strained silicon, and the presence of the dielectric material allows the strained silicon to be grown as a thin fully depleted layer. A replacement gate is then formed by damascene processing.