III-Phosphide and III-Arsenide flip chip light-emitting devices
US6946309B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2004 |
| Grant date | Sep 20, 2005 |
| Priority date | — |
| Expiry date | Jun 14, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/816
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A light-emitting semiconductor device includes a stack of layers including an active region. The active region includes a semiconductor selected from the group consisting of III-Phosphides, III-Arsenides, and alloys thereof. A superstrate substantially transparent to light emitted by the active region is disposed on a first side of the stack. First and second electrical contacts electrically coupled to apply a voltage across the active region are disposed on a second side of the stack opposite to the first side. In some embodiments, a larger fraction of light emitted by the active region exits the stack through the first side than through the second side. Consequently, the light-emitting semiconductor device may be advantageously mounted as a flip chip to a submount, for example.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.