Synthetic antiferromagnet structures for use in MTJs in MRAM technology
US6946697B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 2003 |
| Grant date | Sep 20, 2005 |
| Priority date | — |
| Expiry date | Jan 5, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1121
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic tunnel junction (MTJ), which is useful in magnetoresistive random access memories (MRAMs), has a free layer which is a synthetic antiferromagnet (SAF) structure. This SAF is composed of two ferromagnetic layers that are separated by a coupling layer. The coupling layer has a base material that is non-magnetic and also other materials that improve thermal endurance, control of the coupling strength of the SAF, and magnetoresistance ratio (MR). The preferred base material is ruthenium and the preferred other material is tantalum. Furthering these benefits, cobalt-iron is added at the interface between the tantalum and one of the ferromagnetic layers. Also the coupling layer can have even more layers and the materials used can vary. Also the coupling layer itself can be an alloy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.