Method for patterning ceramic layers

US6953722B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Harald Seidl · Brandenburg an der Havel, DE
• Martin Gutsche · Dorfen, DE
• Thomas Hecht · Dresden, DE
• Stefan Jakschik · Kessel-Lo, BE
• Stephan Kudelka · Radeberg, DE
• Uwe Schroder · Dresden, DE
• Matthias Schmeide · Neustadt an der Donau, DE

Key dates

• Filing date: Apr 29, 2003
• Grant date: Oct 11, 2005
• Expiry date: Sep 22, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/31133
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

In a method for forming patterned ceramic layers, a ceramic material is deposited on a substrate and is subsequently densified by heat treatment, for example. In this case, the initially amorphous material is converted into a crystalline or polycrystalline form. In order that the now crystalline material can be removed again from the substrate, imperfections are produced in the ceramic material, for example by ion implantation. As a result, the etching medium can more easily attack the ceramic material, so that the latter can be removed with a higher etching rate. Through inclined implantation, the method can be performed in a self-aligning manner and the ceramic material can be removed on one side, by way of example, in trenches or deep trench capacitors.