Method of and platen for controlling removal rate characteristics in chemical mechanical planarization
US6955588B1 · kind B1 · utility
29Cited by
79References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 31, 2004 |
| Grant date | Oct 18, 2005 |
| Priority date | — |
| Expiry date | Mar 31, 2024 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B37/12
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
Methods and a platen control parameters of a removal rate characteristic in chemical mechanical planarization, while allowing a low-cost polishing pad to be used especially in fast edge operations, and while reducing the amount of fluid used to support the polishing pad. Platen configuration provides fluid pressure control to reduce leakage of fluid from beneath the polishing pad, and contributes to control of a location of an inflection point of the removal rate characteristic. Another configuration controls a shape of a section of the removal rate characteristic between the inflection point and a leading wafer edge.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.