Memory element formation with photosensitive polymer dielectric
US6955939B1 · kind B1 · utility
18Cited by
14References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 3, 2003 |
| Grant date | Oct 18, 2005 |
| Priority date | — |
| Expiry date | Apr 4, 2024 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/943
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method of making organic memory devices containing organic memory cells made of two electrodes with a controllably conductive media between the two electrodes is disclosed. The organic memory devices are made using a patternable, photosensitive dielectric that facilitates formation of the memory cells and mitigates the necessity of using photoresists.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.