Semiconductor structure and methods for fabricating same
US6955971B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 12, 2003 |
| Grant date | Oct 18, 2005 |
| Priority date | — |
| Expiry date | Nov 12, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/981
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure and methods for fabricating are disclosed. In an implementation, a method of fabricating a semiconductor structure includes forming a first semiconductor material substrate with a first dielectric area having a first thickness and a second dielectric area having a second thickness, bonding the first substrate to a second semiconductor substrate, and thinning at least one of the first and second substrates. The invention also pertains to a semiconductor structure. The structure includes a semiconductor substrate having a surface layer of semiconductor material, a first dielectric layer of a first dielectric material buried under the surface layer, and a second dielectric layer buried under the surface layer. In an embodiment, the thickness of the first dielectric layer is different than the thickness of the second dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.