SILICON CARBIDE POWER METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS HAVING A SHORTING CHANNEL AND METHODS OF FABRICATING SILICON CARBIDE METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS HAVING A SHORTING CHANNEL

US6956238B2 · kind B2 · utility

Assignee

• Cree, Inc. · US

Inventors

• Sei-Hyung Ryu · Cary, US
• Anant Agarwal · San Jose, US
• Mrinal K. Das · Morrisville, US
• Lori A. Lipkin · Raleigh, US
• John Williams Palmour · Raleigh, US
• Ranbir Singh · Cary, US

Key dates

• Filing date: Jul 24, 2001
• Grant date: Oct 18, 2005
• Expiry date: Jul 24, 2021

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/637
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Silicon carbide metal-oxide semiconductor field effect transistors (MOSFETs) and methods of fabricating silicon carbide MOSFETs are provided. The silicon carbide MOSFETs have an n-type silicon carbide drift layer, spaced apart p-type silicon carbide regions in the n-type silicon carbide drift layer and having n-type silicon carbide regions therein, and a nitrided oxide layer. The MOSFETs also have n-type shorting channels extending from respective ones of the n-type silicon carbide regions through the p-type silicon carbide regions to the n-type silicon carbide drift layer. In further embodiments, silicon carbide MOSFETs and methods of fabricating silicon carbide MOSFETs are provided that include a region that is configured to self-deplete the source region, between the n-type silicon carbide regions and the drift layer, adjacent the oxide layer, upon application of a zero gate bias.