Integrated circuit defect analysis using liquid crystal
US6956385B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 26, 2001 |
| Grant date | Oct 18, 2005 |
| Priority date | — |
| Expiry date | May 13, 2022 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/24
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Defect analysis of an integrated circuit die having a back side opposite circuitry at a circuit side and a liquid crystal liquid is enhanced using near infrared (nIR) laser light. According to an example embodiment of the present invention, nIR laser light is directed to an integrated circuit die having a liquid crystal layer formed over the die. When the die includes a defect that generates heat, the heat generated in the die as a result of the nIR laser light adds to the heat in the die generated as a result of the defect and causes a portion of the liquid crystal layer to change phase near the defect. The phase change is detected and used to identify a portion of the die having a defect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.