Method of programming dual cell memory device to store multiple data states per cell
US6956768B2 · kind B2 · utility
3Cited by
18References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 15, 2003 |
| Grant date | Oct 18, 2005 |
| Priority date | — |
| Expiry date | Dec 27, 2023 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of programming a multi-level, dual cell memory device. The method includes independently programming a first charge storing cell and a second charge storing cell to respective data states, the data states selected from a blank program level or one of a plurality of charged program levels. Also disclosed is a method of reading the multi-level, dual cell memory device using a plurality of reference currents.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.