Semiconductor device with nanoclusters

US6958265B2 · kind B2 · utility

Assignee

• Freeescale Semiconductor, Inc. · US

Inventors

• Robert F. Steimle · Austin, US
• Ramachandran Muralidhar · Austin, US
• Wayne M. Paulson · Chandler, US
• Rajesh A. Rao · Austin, US
• Bruce E. White · Round Rock, US
• Erwin J. Prinz · Austin, US

Key dates

• Filing date: Sep 16, 2003
• Grant date: Oct 25, 2005
• Expiry date: Nov 21, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D30/6893
• WIPO field: Micro-structural and nano-technology
• WIPO sector: Chemistry

Abstract

A process of forming a device with nanoclusters. The process includes forming nanoclusters (e.g. silicon nanocrystals) and forming an oxidation barrier layer over the nanoclusters to inhibit oxidizing agents from oxidizing the nanoclusters during a subsequent formation of a dielectric of the device. At least a portion of the oxidation barrier layer is removed after the formation of the dielectric. In one example, the device is a memory wherein the nanoclusters are utilized as charge storage locations for charge storage transistors of the memory. In this example, the oxidation barrier layer protects the nanoclusters from oxidizing agents due to the formation of gate dielectric for high voltage transistors of the memory.