Patent · US Expired

Method for production of a metallic or metal-containing layer

US6960524B2 · kind B2 · utility

0Cited by

6References

9Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Thomas Hecht · Dresden, DE
Bernhard Sell · Dresden, DE
Annette Saenger · Dresden, DE

Key dates

Filing date	Oct 21, 2003
Grant date	Nov 1, 2005
Priority date	—
Expiry date	Oct 21, 2023

Classification

Technology area (CPC H)Electricity
CPC primaryH10D1/692
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The invention relates to a method for production of a metallic or metal-containing layer (5) by using a pre-cursor on a silicon- or germanium-containing layer, of, in particular, an electronic component, whereby an intermediate layer is applied to the silicon- or germanium-containing layer before the use of the pre-cursor. Said intermediate layer forms a diffusion barrier for at least those elements or the pre-cursor which would etch the silicon- or germanium-containing layer and is itself resistant to etching by the pre-cursor.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.