Formation of thin channels for TFT devices to ensure low variability of threshold voltages

US6960794B2 · kind B2 · utility

Assignee

• MATRIX SEMICONDUCTOR, INC. · US

Inventors

• Andrew J. Walker · Mountain View, US
• S. Brad Herner · San Jose, US
• Maitreyee Mahajani · Saratoga, US
• En-Hsing Chen · Sunnyvale, US
• Roy E. Scheuerlein · Cupertino, US
• Sucheta Nallamothu · San Jose, US
• Mark Clark · Santa Clara, US

Key dates

• Filing date: Dec 31, 2002
• Grant date: Nov 1, 2005
• Expiry date: Dec 31, 2022

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/00

Abstract

A thin film transistor with a channel less than 100 angstroms thick, preferably less than 80 angstroms thick, preferably less than 60 angstroms thick. The very thin channel reduces variability of threshold voltage from one TFT to the next. This is particularly advantageous for TFT memory arrays. It is possible that an extremely thin channel restricts the size of grains, forcing many small grains to be formed.