High-voltage semiconductor component

US6960798B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Gerald Deboy · Klagenfurt, AT
• Dirk Ahlers · Hersbruck, DE
• Helmut Strack · Hersbruck, DE
• Michael Rueb · Faak am See, AT
• Hans Weber · Villach, AT

Key dates

• Filing date: Jun 6, 2003
• Grant date: Nov 1, 2005
• Expiry date: Sep 9, 2023

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/519

Abstract

A semiconductor component has a semiconductor body comprising a blocking pn junction, a source zone of a first conductivity type connected to a first electrode and bordering on a zone forming the blocking pn junction of a second conductivity type complementary to the first conductivity type, and a drain zone of the first conductivity type connected to a second electrode. The side of the zone of the second conductivity type facing the drain zone forms a first surface, and in the region between the first surface and a second surface located between the first surface and the drain zone, comprises areas of the first and second conductivity type nested in one another. The second surface is positioned at a distance from the drain zone such that the areas of the first and second conductivity type nested in each other do not reach the drain zone.