Tandem etch chamber plasma processing system
US6962644B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 10, 2002 |
| Grant date | Nov 8, 2005 |
| Priority date | — |
| Expiry date | May 8, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32458
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method and apparatus for processing wafers including a chamber defining a plurality of isolated processing regions. The isolated processing regions have an upper end and a lower end. The chamber further includes a plurality of plasma generation devices each disposed adjacent the upper end of each isolated processing region, and one of a plurality of power supplies connected to each plasma generation device. The output frequency of the plurality of power supplies are phase and/or frequency locked together. Additionally, the chamber includes a plurality of gas distribution assemblies. Each gas distribution assembly is disposed within each isolated processing region. A movable wafer support is disposed within each isolated processing region to support a wafer for plasma processing thereon. The movable wafer support includes a bias electrode coupled to a bias power supply configured to control the bombardment of plasma ions toward the movable wafer support.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.