Methods for manufacturing a light-emitting device
US6962828B1 · kind B1 · utility
1Cited by
15References
20Claims
0Family size
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Key dates
| Filing date | Nov 15, 2000 |
| Grant date | Nov 8, 2005 |
| Priority date | — |
| Expiry date | Jul 3, 2021 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32341
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A novel light-emitting device includes a saphire substrate with a light-emitting layer comprising InXGa1−XN, where the critical value of the indium mole fraction X is determined by a newly derived relationship between the indium mole fraction X and the wavelength λ of emitted light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.