Process to manufacture nonvolatile MOS memory device
US6962850B2 · kind B2 · utility
1Cited by
8References
31Claims
0Family size
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Key dates
| Filing date | Oct 1, 2003 |
| Grant date | Nov 8, 2005 |
| Priority date | — |
| Expiry date | Nov 7, 2023 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/962
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
Devices with embedded silicon or germanium nanocrystals, fabricated using ion implantation, exhibit superior data-retention characteristics relative to conventional floating-gate devices. However, the prior art use of ion implantation for their manufacture introduces several problems. These have been overcome by initial use of rapid thermal oxidation to grow a high quality layer of thin tunnel oxide. Chemical vapor deposition is then used to deposit a germanium doped oxide layer. A capping oxide is then deposited following which the structure is rapid thermally annealed to synthesize the germanium nanocrystals.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.