Method for reducing free surface roughness of a semiconductor wafer
US6962858B2 · kind B2 · utility
24Cited by
12References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 30, 2003 |
| Grant date | Nov 8, 2005 |
| Priority date | — |
| Expiry date | Dec 30, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The invention provides a method of reducing the roughness of the free surface of a wafer of semiconductor material by applying a rapid thermal annealing process under a pure argon atmosphere for a time sufficient to uniformly heat and smooth the free surface of the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.