Patent · US Expired

Polishing apparatus and method for forming an integrated circuit

US6964598B1 · kind B1 · utility

1Cited by
16References
7Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJul 12, 2001
Grant dateNov 15, 2005
Priority date
Expiry dateFeb 8, 2022

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/3212
  • WIPO fieldMachine tools
  • WIPO sectorMechanical engineering

Abstract

In one embodiment, a semiconductor substrate (38) is uniformly polished using a polishing pad (16) that has a first polishing region (26), a second polishing region (28), and a third polishing region (30). The semiconductor substrate (38) is aligned to the polishing pad (16), such that the center of the semiconductor substrate (38) overlies the second polishing region (28), and the edge of the semiconductor substrate overlies the first polishing region (26) and the third polishing region (30). During polishing, the semiconductor substrate (38) is not radially oscillated over the surface of the polishing pad, and as a result a more uniform polishing rate is achieved across the semiconductor substrate (38). This allows the semiconductor substrate (38) to be uniformly polished from center to edge, and increases die yield because die located on the semiconductor substrate (38) are not over polished.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.