Method for forming a semiconductor device having isolation regions
US6964911B2 · kind B2 · utility
3Cited by
3References
24Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 23, 2003 |
| Grant date | Nov 15, 2005 |
| Priority date | — |
| Expiry date | Sep 23, 2023 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming a semiconductor device having isolation structures decreases leakage current. A channel isolation structure decreases leakage current through a channel structure. In addition, current electrode dielectric insulation structures are formed under current electrode regions to prevent leakage between the current electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.