ONO fabrication process for reducing oxygen vacancy content in bottom oxide layer in flash memory devices
US6969886B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 12, 2004 |
| Grant date | Nov 29, 2005 |
| Priority date | — |
| Expiry date | Jul 12, 2024 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A SONOS flash memory device, including a semiconductor substrate; an ONO structure formed on the semiconductor substrate, the ONO structure including a bottom oxide layer, a dielectric charge storage layer and a top oxide layer, the bottom oxide layer having a super-stoichiometric oxygen content and an oxygen vacancy content of about 1010/cm2 or less, wherein the bottom oxide layer exhibits a reduced charge leakage relative to a bottom oxide layer having a stoichiometric or sub-stoichiometric oxygen content and a greater number of oxygen vacancies. In one embodiment, the bottom oxide layer has an oxygen vacancy content of substantially zero.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.