Memory element having islands
US6972985B2 · kind B2 · utility
46Cited by
12References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 15, 2004 |
| Grant date | Dec 6, 2005 |
| Priority date | — |
| Expiry date | Jun 15, 2024 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/79
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory including a memory element having islands is provided. The memory has address decoding circuitry and an array of memory plugs. The memory plugs include memory element that have island structures of a first material within the bulk of a second material. The island structures are typically nanoparticles. The memory plugs can be placed in a first resistive state at a first write voltage, placed in a second resistive state at a second write voltage, and have its resistive state determined at a read voltage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.